Mosfet 100v
This post explains for the MOSFET PA110BDA.
The Part Number is PA110BDA.
§ Advanced MOSFET process technology § Ideal for high efficiency switch mode power supplies § Low on-resistance with low gate charge § Fast switching and reverse body recovery 100V N-Channel MOSFET GSGT10240 TO-263 (D2PAK) Symbol VDS VGS IDM EAS RθJC TSTG TJ Single Pulse Avalanche Energy4 2784 mJ °C Max. 100 ±20 240 960 Unit V V A A-55. Vishay is one of the world's foremost manufacturers of power MOSFETs. The Vishay Siliconix MOSFET product line includes a diverse range of advanced technologies in more than 30 package types, from the chipscale MICRO FOOT® and thermally advanced PowerPAK® families to. ©2002 Fairchild Semiconductor Corporation IRF540N Rev. C IRF540N 33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET Packaging Symbol Features. Ultra Low On-Resistance.
The Package is TO-252 Type
The function of this transistor is Silicon N -hannel MOS Type Transistor.
Manufacturers : UNIKC Semiconductor
Image
Description : Silicon N Channel MOS Type Field Effect Transistor
Mosfet 100v 120a
Absolute Maximum Ratings (Tc = 25°C)
1. Drain to source voltage : VDSS = 100 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 15 A
4. Drain power dissipation : PD =50 W
5. Single pulse avalanche energy : Eas = 14.8 mJ
6. Avalanche current : Iar = 5.4 A
7. Channel temperature : Tch = 150 °C
8. Storage temperature : Tstg = -55 to +150 °C
Marshall Lead Mosfet 100 Head
Pinout
PA110BDA PDF Datasheet
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Mosfet 100v 20a
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